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NXH004P120M3F2PTNG
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 338 A, 1.2 kV, 0.0055 ohm, Module
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY1,799.750 (CNY2,033.7175) |
| 5+ | CNY1,574.780 (CNY1,779.5014) |
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CNY1,799.75 (CNY2,033.72 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH004P120M3F2PTNG
Order Code4305081
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id338A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0055ohm
Transistor Case StyleModule
No. of Pins36Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation1.098kW
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
338A
Drain Source On State Resistance
0.0055ohm
No. of Pins
36Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
150°C
SVHC
No SVHC (15-Jan-2018)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
1.098kW
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001