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QH8M22TCR
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 4.5 A, 4.5 A, 0.0346 ohm
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Available to Order
Manufacturer Standard Lead Time: 28 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY4.240 (CNY4.7912) |
| 500+ | CNY3.800 (CNY4.294) |
| 1000+ | CNY3.500 (CNY3.955) |
| 5000+ | CNY3.390 (CNY3.8307) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY424.00 (CNY479.12 inc GST)
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Product Information
ManufacturerROHM
Manufacturer Part NoQH8M22TCR
Order Code2706749RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Continuous Drain Current Id4.5A
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel4.5A
On Resistance Rds(on)0.0346ohm
Continuous Drain Current Id P Channel4.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0346ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0346ohm
Transistor Case StyleTSMT
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd1.5W
No. of Pins8Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
4.5A
Continuous Drain Current Id N Channel
4.5A
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance N Channel
0.0346ohm
Drain Source On State Resistance P Channel
0.0346ohm
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Power Dissipation P Channel
1.5W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (23-Jan-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.0346ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TSMT
Power Dissipation Pd
1.5W
Power Dissipation N Channel
1.5W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005577