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UT6K3TCR
Dual MOSFET, N Channel, 30 V, 30 V, 5.5 A, 5.5 A, 0.03 ohm
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Available to Order
Manufacturer Standard Lead Time: 34 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY3.160 (CNY3.5708) |
| 500+ | CNY2.610 (CNY2.9493) |
| 1000+ | CNY1.960 (CNY2.2148) |
| 5000+ | CNY1.910 (CNY2.1583) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY316.00 (CNY357.08 inc GST)
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Product Information
ManufacturerROHM
Manufacturer Part NoUT6K3TCR
Order Code2965352RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id5.5A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel5.5A
On Resistance Rds(on)0.03ohm
Continuous Drain Current Id P Channel5.5A
Drain Source On State Resistance N Channel0.03ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.03ohm
Transistor Case StyleDFN2020
Gate Source Threshold Voltage Max1.5V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
5.5A
Continuous Drain Current Id N Channel
5.5A
Continuous Drain Current Id P Channel
5.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.03ohm
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (23-Jan-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.03ohm
Drain Source On State Resistance N Channel
0.03ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
DFN2020
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000026