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Quantity | Price (inc GST) |
---|---|
1+ | CNY42.390 (CNY47.9007) |
10+ | CNY33.680 (CNY38.0584) |
25+ | CNY33.330 (CNY37.6629) |
50+ | CNY32.980 (CNY37.2674) |
100+ | CNY32.620 (CNY36.8606) |
250+ | CNY32.270 (CNY36.4651) |
500+ | CNY31.910 (CNY36.0583) |
Product Information
Product Overview
MASTERGAN4LTR is a 600V half-bridge enhancement-mode GaN HEMT with a high-voltage driver. It is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in a half‑bridge configuration. It features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with analogue controllers, microcontrollers, and DSP units. Typical applications are high-frequency resonant converters including LLC, LCC and resonant flyback, active clamp flybacks, switch-mode power supplies, chargers and adapters, PFC, high-voltage DC-DC and DC-AC converters.
- Reverse current capability, zero reverse recovery loss
- UVLO protection on VCC, internal bootstrap diode
- Interlocking function, dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3V to 15V compatible inputs with hysteresis and pull-down
- Overtemperature protection, bill of material reduction
- Very compact and simplified layout, flexible, easy, and fast design
- QFN package
- Industrial temperature range from -40°C to 125°C
- Output capacitance is 14.2pF (VGS = 0V, VDS = 400V)
Technical Specifications
1Channels
Half Bridge
31Pins
Surface Mount
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4.75V
-40°C
-
-
No SVHC (21-Jan-2025)
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GaN HEMT
QFN-EP
Non-Inverting
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9.5V
125°C
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-
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate