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数量 | 价钱 (含税) |
---|---|
1+ | CNY42.390 (CNY47.9007) |
10+ | CNY33.680 (CNY38.0584) |
25+ | CNY33.330 (CNY37.6629) |
50+ | CNY32.980 (CNY37.2674) |
100+ | CNY32.620 (CNY36.8606) |
250+ | CNY32.270 (CNY36.4651) |
500+ | CNY31.910 (CNY36.0583) |
产品概述
MASTERGAN4LTR is a 600V half-bridge enhancement-mode GaN HEMT with a high-voltage driver. It is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in a half‑bridge configuration. It features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with analogue controllers, microcontrollers, and DSP units. Typical applications are high-frequency resonant converters including LLC, LCC and resonant flyback, active clamp flybacks, switch-mode power supplies, chargers and adapters, PFC, high-voltage DC-DC and DC-AC converters.
- Reverse current capability, zero reverse recovery loss
- UVLO protection on VCC, internal bootstrap diode
- Interlocking function, dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3V to 15V compatible inputs with hysteresis and pull-down
- Overtemperature protection, bill of material reduction
- Very compact and simplified layout, flexible, easy, and fast design
- QFN package
- Industrial temperature range from -40°C to 125°C
- Output capacitance is 14.2pF (VGS = 0V, VDS = 400V)
技术规格
1放大器
半桥
31引脚
表面安装
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4.75V
-40°C
-
-
No SVHC (21-Jan-2025)
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GaN HEMT
QFN-EP
非反向
-
9.5V
125°C
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-
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书