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SCT1000N170
Silicon Carbide MOSFET, Single, N Channel, 7 A, 1.7 kV, 1 ohm, HiP247
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280 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY62.290 (CNY70.3877) |
| 5+ | CNY61.560 (CNY69.5628) |
Price for:Each
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Multiple: 1
CNY62.29 (CNY70.39 inc GST)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT1000N170
Order Code3680100
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id7A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance1ohm
Transistor Case StyleHiP247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3.5V
Power Dissipation96W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
7A
Drain Source On State Resistance
1ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
3.5V
Operating Temperature Max
200°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.7kV
Transistor Case Style
HiP247
Rds(on) Test Voltage
20V
Power Dissipation
96W
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0045