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CSD85301Q2T
Dual MOSFET, N Channel, 20 V, 20 V, 5 A, 5 A, 0.023 ohm
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Available to Order
Manufacturer Standard Lead Time: 105 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY7.000 (CNY7.910) |
| 500+ | CNY6.420 (CNY7.2546) |
| 1000+ | CNY5.840 (CNY6.5992) |
| 5000+ | CNY5.250 (CNY5.9325) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY700.00 (CNY791.00 inc GST)
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Product Information
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD85301Q2T
Order Code3009682RL
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id5A
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel5A
On Resistance Rds(on)0.023ohm
Continuous Drain Current Id P Channel5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.023ohm
Drain Source On State Resistance P Channel0.023ohm
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Transistor Case StyleWSON
Power Dissipation Pd2.3W
No. of Pins6Pins
Power Dissipation N Channel2.3W
Power Dissipation P Channel2.3W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Product Overview
The CSD85301Q2T is a NexFET™ dual N-channel Power MOSFET designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source ON-resistance that minimizes losses and offers low component count for space constrained applications.
- Low ON-resistance
- Optimized for 5V gate driver
- Avalanche rated
- Halogen-free
Applications
Industrial, Power Management, Communications & Networking, Computers & Computer Peripherals
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
5A
Continuous Drain Current Id N Channel
5A
Continuous Drain Current Id P Channel
5A
Drain Source On State Resistance N Channel
0.023ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
WSON
No. of Pins
6Pins
Power Dissipation P Channel
2.3W
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.023ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.023ohm
Gate Source Threshold Voltage Max
900mV
Power Dissipation Pd
2.3W
Power Dissipation N Channel
2.3W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00006