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Quantity | Price (inc GST) |
---|---|
1+ | CNY791.100 (CNY893.943) |
5+ | CNY752.340 (CNY850.1442) |
10+ | CNY720.350 (CNY813.9955) |
50+ | CNY686.910 (CNY776.2083) |
Product Information
Product Overview
The TS256MSQ64V8U is a 128M x 8 DRAM high-speed low power memory DDR2 Unbuffered DIMM use DDR2 SDRAM and a 2048 bits serial EEPROM on a 240-pin printed circuit board. It is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. The synchronous design allows precise cycle control with the use of system clock. The data I/O transactions are possible on both edges of DQS, range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
- Programmable sequential/interleave burst mode
- Bi-directional differential data-strobe
- Off-chip driver (OCD) impedance adjustment
- MRS cycle with address key programs
- On die termination
- Serial presence detect with EEPROM
Applications
Computers & Computer Peripherals, Portable Devices
Technical Specifications
2GB
PC2-6400
Notebook SODIMM
1.9V
0°C
-
800MHz
200-Pin DDR2 SO-DIMM
1.7V
1.8V
85°C
No SVHC (14-Jun-2023)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate