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TS256MSQ64V8U
RAM存储模块, 2 GB, 800 MHz, PC2-6400, 200针 DDR2 SO-DIMM, 笔记本电脑SODIMM
产品信息
技术文档 (2)
产品概述
The TS256MSQ64V8U is a 128M x 8 DRAM high-speed low power memory DDR2 Unbuffered DIMM use DDR2 SDRAM and a 2048 bits serial EEPROM on a 240-pin printed circuit board. It is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. The synchronous design allows precise cycle control with the use of system clock. The data I/O transactions are possible on both edges of DQS, range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
- Programmable sequential/interleave burst mode
- Bi-directional differential data-strobe
- Off-chip driver (OCD) impedance adjustment
- MRS cycle with address key programs
- On die termination
- Serial presence detect with EEPROM
应用
计算机和计算机周边, 便携式器材
可延期交货
由于市场条件的影响，交货时间仅供一般指导，可能会在短时间内发生变化
- 1+
- 5+
- 10+
| 数量 | 价钱 (不含税) (含税) | 您所支付金额 (不含税) |
|---|---|---|
| 1+ | CNY1,017.86 CNY1,150.1818 | ( ) |
| 5+ | CNY1,012.92 CNY1,144.5996 | ( ) |
| 10+ | CNY1,007.98 CNY1,139.0174 | ( ) |
| 数量 | 价钱 (不含税) (含税) | 您所支付金额 (不含税) |
|---|
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