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SI1026X-T1-GE3
Dual MOSFET, N Channel, 60 V, 60 V, 305 mA, 305 mA, 1.4 ohm
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Manufacturer Standard Lead Time: 24 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.240 (CNY2.5312) |
| 500+ | CNY1.450 (CNY1.6385) |
| 1500+ | CNY1.430 (CNY1.6159) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY224.00 (CNY253.12 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1026X-T1-GE3
Order Code2646361RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id305mA
On Resistance Rds(on)1.4ohm
Continuous Drain Current Id N Channel305mA
Continuous Drain Current Id P Channel305mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1.4ohm
Drain Source On State Resistance P Channel1.4ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Transistor Case StyleSC-89
No. of Pins6Pins
Power Dissipation Pd250mW
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Product Overview
The SI1026X-T1-GE3 is a 60VDS N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.
- 2000V Gate-source ESD protected
- Low ON-resistance
- Low threshold
- 15 ns Fast switching speed
- 30pF Low input capacitance
- Low input and output leakage
- Miniature package
- Halogen-free
- Low offset voltage
- Low-voltage operation
- High-speed circuits
- Low error voltage
- Small board area
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
1.4ohm
Continuous Drain Current Id P Channel
305mA
Drain Source On State Resistance N Channel
1.4ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SC-89
Power Dissipation Pd
250mW
Power Dissipation P Channel
250mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
305mA
Continuous Drain Current Id N Channel
305mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
1.4ohm
Gate Source Threshold Voltage Max
2V
No. of Pins
6Pins
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000123