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SI2302CDS-T1-GE3
MOSFET, N CHANNEL, 20V, 0.045OHM, 2.6A, TO-236, FULL REEL
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6,000 In Stock
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6000 Delivery in 5-6 Business Days(US stock)
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY1.060 (CNY1.1978) |
| 9000+ | CNY1.020 (CNY1.1526) |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
CNY3,180.00 (CNY3,593.40 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2302CDS-T1-GE3
Order Code2524651
Technical Datasheet
Drain Source On State Resistance0.057ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage2.5V
Gate Source Threshold Voltage Max850mV
Power Dissipation710mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source On State Resistance
0.057ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
850mV
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Transistor Case Style
TO-236
Rds(on) Test Voltage
2.5V
Power Dissipation
710mW
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):0