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SI3552DV-T1-E3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.085 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI3552DV-T1-E3
Order Code2646377RL
Product RangeTrenchFET Series
Technical Datasheet
194 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY3.790 (CNY4.2827) |
| 500+ | CNY2.670 (CNY3.0171) |
| 1500+ | CNY2.610 (CNY2.9493) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY379.00 (CNY428.27 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3552DV-T1-E3
Order Code2646377RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id2.5A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.085ohm
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel2.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.085ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.085ohm
Transistor Case StyleTSOP
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd1.15W
Power Dissipation N Channel1.15W
Power Dissipation P Channel1.15W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
2.5A
On Resistance Rds(on)
0.085ohm
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance N Channel
0.085ohm
Drain Source On State Resistance P Channel
0.085ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.15W
Power Dissipation P Channel
1.15W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
2.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TSOP
No. of Pins
6Pins
Power Dissipation N Channel
1.15W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000129