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SI3590DV-T1-GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.062 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY3.880 (CNY4.3844) |
| 500+ | CNY2.760 (CNY3.1188) |
| 1500+ | CNY2.750 (CNY3.1075) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY388.00 (CNY438.44 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3590DV-T1-GE3
Order Code2056715RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id2.5A
On Resistance Rds(on)0.062ohm
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel2.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.062ohm
Drain Source On State Resistance P Channel0.062ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleTSOP
Gate Source Threshold Voltage Max1.5V
No. of Pins6Pins
Power Dissipation Pd830mW
Power Dissipation N Channel830mW
Power Dissipation P Channel830mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI3590DV-T1-GE3 is a 30V Dual N and P-channel TrenchFET® Power MOSFET. Ultra low RDS(on) for high Efficiency and optimized for high side and low side operation. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- Low conduction losses
Applications
Power Management
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.062ohm
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance N Channel
0.062ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
830mW
Power Dissipation P Channel
830mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
2.5A
Continuous Drain Current Id N Channel
2.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.062ohm
Transistor Case Style
TSOP
No. of Pins
6Pins
Power Dissipation N Channel
830mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000045