Print Page
SI4946BEY-T1-E3
Dual MOSFET, N Channel, 60 V, 6.5 A, 0.033 ohm
Image is for illustrative purposes only. Please refer to product description.
3,255 In Stock
Need more?
3255 Delivery in 5-6 Business Days(UK stock)
Available until stock is exhausted
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY7.070 (CNY7.9891) |
| 500+ | CNY5.910 (CNY6.6783) |
| 1000+ | CNY5.570 (CNY6.2941) |
| 5000+ | CNY5.400 (CNY6.102) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY707.00 (CNY798.91 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4946BEY-T1-E3
Order Code1497619RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id6.5A
Continuous Drain Current Id N Channel6.5A
On Resistance Rds(on)0.033ohm
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.033ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.4V
No. of Pins8Pins
Power Dissipation Pd2.4W
Power Dissipation N Channel2.4W
Power Dissipation P Channel-
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4946BEY-T1-E3 is a 60V Dual N-channel TrenchFET® Power MOSFET. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- 175°C Maximum junction temperature
- 100% Rg Tested
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
6.5A
Continuous Drain Current Id P Channel
-
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2.4V
Power Dissipation Pd
2.4W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
6.5A
On Resistance Rds(on)
0.033ohm
Drain Source On State Resistance N Channel
0.033ohm
Rds(on) Test Voltage
20V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2.4W
Operating Temperature Max
175°C
Qualification
-
MSL
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000255