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SI4946CDY-T1-GE3
Dual MOSFET, N Channel, 60 V, 60 V, 6.1 A, 6.1 A, 0.033 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4946CDY-T1-GE3
Order Code2846626RL
Your Part Number
Technical Datasheet
Available to Order
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY4.210 (CNY4.7573) |
| 500+ | CNY3.290 (CNY3.7177) |
| 1000+ | CNY2.990 (CNY3.3787) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY421.00 (CNY475.73 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4946CDY-T1-GE3
Order Code2846626RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id6.1A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel6.1A
On Resistance Rds(on)0.033ohm
Continuous Drain Current Id P Channel6.1A
Drain Source On State Resistance N Channel0.033ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.033ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd2.8W
Power Dissipation N Channel2.8W
Power Dissipation P Channel2.8W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHC0
Product Overview
Dual N-channel 60V (D-S) MOSFET suitable for use in DC/DC converter, load switch, inverters and circuit protection applications.
- TrenchFET® power MOSFET
- 100% Rg tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
6.1A
Continuous Drain Current Id N Channel
6.1A
Continuous Drain Current Id P Channel
6.1A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
2.8W
Power Dissipation P Channel
2.8W
Product Range
-
Automotive Qualification Standard
-
SVHC
0
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.033ohm
Drain Source On State Resistance N Channel
0.033ohm
Drain Source On State Resistance P Channel
0.033ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation N Channel
2.8W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00016