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SI5517DU-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 6 A, 6 A, 0.032 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI5517DU-T1-GE3
Order Code3772766RL
Product RangeTrench Series
Technical Datasheet
545 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 500+ | CNY4.150 (CNY4.6895) |
| 1000+ | CNY3.770 (CNY4.2601) |
| 5000+ | CNY3.390 (CNY3.8307) |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 1
CNY2,075.00 (CNY2,344.75 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5517DU-T1-GE3
Order Code3772766RL
Product RangeTrench Series
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id6A
On Resistance Rds(on)0.032ohm
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel6A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.032ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.032ohm
Transistor Case StylePowerPAK
Gate Source Threshold Voltage Max1V
Power Dissipation Pd2.3W
No. of Pins8Pins
Power Dissipation N Channel2.3W
Power Dissipation P Channel2.3W
Operating Temperature Max150°C
Product RangeTrench Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCTo Be Advised
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Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.032ohm
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance N Channel
0.032ohm
Drain Source On State Resistance P Channel
0.032ohm
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Power Dissipation P Channel
2.3W
Product Range
Trench Series
Automotive Qualification Standard
-
SVHC
To Be Advised
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
6A
Continuous Drain Current Id N Channel
6A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK
Power Dissipation Pd
2.3W
Power Dissipation N Channel
2.3W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000073