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SI7288DP-T1-GE3
Dual MOSFET, N Channel, 40 V, 40 V, 20 A, 20 A, 0.0156 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7288DP-T1-GE3
Order Code2646392RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
4,390 In Stock
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4390 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY7.100 (CNY8.023) |
| 500+ | CNY5.340 (CNY6.0342) |
| 1500+ | CNY5.250 (CNY5.9325) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY710.00 (CNY802.30 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7288DP-T1-GE3
Order Code2646392RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id20A
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel20A
On Resistance Rds(on)0.0156ohm
Continuous Drain Current Id P Channel20A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0156ohm
Drain Source On State Resistance P Channel0.0156ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Transistor Case StylePowerPAK SO
No. of Pins8Pins
Power Dissipation Pd15.6W
Power Dissipation N Channel15.6W
Power Dissipation P Channel15.6W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
20A
Continuous Drain Current Id N Channel
20A
Continuous Drain Current Id P Channel
20A
Drain Source On State Resistance N Channel
0.0156ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
15.6W
Power Dissipation P Channel
15.6W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.0156ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0156ohm
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Power Dissipation N Channel
15.6W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000231