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SI7949DP-T1-GE3
Dual MOSFET, P Channel, 60 V, 60 V, 5 A, 5 A, 0.08 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7949DP-T1-GE3
Order Code3772788RL
Product RangeTrench Series
Your Part Number
Technical Datasheet
4,326 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY7.930 (CNY8.9609) |
| 500+ | CNY6.340 (CNY7.1642) |
| 1000+ | CNY5.440 (CNY6.1472) |
| 5000+ | CNY5.310 (CNY6.0003) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY793.00 (CNY896.09 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7949DP-T1-GE3
Order Code3772788RL
Product RangeTrench Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id5A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.08ohm
Continuous Drain Current Id N Channel5A
Continuous Drain Current Id P Channel5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.08ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.08ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation Pd1.5W
No. of Pins8Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max150°C
Product RangeTrench Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
5A
On Resistance Rds(on)
0.08ohm
Continuous Drain Current Id P Channel
5A
Drain Source On State Resistance N Channel
0.08ohm
Drain Source On State Resistance P Channel
0.08ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
1.5W
Product Range
Trench Series
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
1.5W
Power Dissipation N Channel
1.5W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000225