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SIS590DN-T1-GE3
Dual MOSFET, N and P Channel, 100 V, 100 V, 4 A, 4 A, 0.197 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIS590DN-T1-GE3
Order Code3765824RL
Product RangeTrenchFET Series
Technical Datasheet
5,330 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY4.750 (CNY5.3675) |
| 500+ | CNY3.750 (CNY4.2375) |
| 1000+ | CNY3.340 (CNY3.7742) |
| 5000+ | CNY2.920 (CNY3.2996) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY475.00 (CNY536.75 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS590DN-T1-GE3
Order Code3765824RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN and P Channel
Transistor PolarityN and P Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id4A
Continuous Drain Current Id N Channel4A
On Resistance Rds(on)0.197ohm
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.197ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.197ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Transistor Case StylePowerPAK 1212
No. of Pins8Pins
Power Dissipation Pd23.1W
Power Dissipation N Channel23.1W
Power Dissipation P Channel23.1W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
Product Overview
N- and P-channel 100V (D-S) MOSFET is typically used in applications such as DC/DC converters, active clamp, brushless DC motors, AC/DC inverter and motor drive switch.
- TrenchFET® power MOSFETs
- Thermally enhanced PowerPAK®
- 100% Rg tested
Technical Specifications
Channel Type
N and P Channel
Drain Source Voltage Vds
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
4A
Continuous Drain Current Id P Channel
4A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK 1212
Power Dissipation Pd
23.1W
Power Dissipation P Channel
23.1W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
Transistor Polarity
N and P Channel
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.197ohm
Drain Source On State Resistance N Channel
0.197ohm
Drain Source On State Resistance P Channel
0.197ohm
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Power Dissipation N Channel
23.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005