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SISF00DN-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 60 A, 60 A, 4200 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISF00DN-T1-GE3
Order Code2932982RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 48 week(s)
Notify me when back in stock
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY6.380 (CNY7.2094) |
| 500+ | CNY5.070 (CNY5.7291) |
| 1000+ | CNY4.930 (CNY5.5709) |
| 5000+ | CNY4.780 (CNY5.4014) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY638.00 (CNY720.94 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISF00DN-T1-GE3
Order Code2932982RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id60A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel60A
On Resistance Rds(on)0.0042ohm
Continuous Drain Current Id P Channel60A
Drain Source On State Resistance N Channel4200µohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel4200µohm
Gate Source Threshold Voltage Max2.1V
Transistor Case StylePowerPAK 1212
No. of Pins8Pins
Power Dissipation Pd69.4W
Power Dissipation N Channel69.4W
Power Dissipation P Channel69.4W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
60A
Continuous Drain Current Id N Channel
60A
Continuous Drain Current Id P Channel
60A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
4200µohm
Transistor Case Style
PowerPAK 1212
Power Dissipation Pd
69.4W
Power Dissipation P Channel
69.4W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0042ohm
Drain Source On State Resistance N Channel
4200µohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.1V
No. of Pins
8Pins
Power Dissipation N Channel
69.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003