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SIZ322DT-T1-GE3
Dual MOSFET, N Channel, 25 V, 25 V, 30 A, 30 A, 0.00529 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ322DT-T1-GE3
Order Code2932983RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
1,674 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY3.810 (CNY4.3053) |
| 500+ | CNY3.180 (CNY3.5934) |
| 1000+ | CNY2.830 (CNY3.1979) |
| 5000+ | CNY2.470 (CNY2.7911) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY381.00 (CNY430.53 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ322DT-T1-GE3
Order Code2932983RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id30A
Drain Source Voltage Vds P Channel25V
On Resistance Rds(on)0.00529ohm
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.00529ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.00529ohm
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2.4V
Power Dissipation Pd16.7W
No. of Pins8Pins
Power Dissipation N Channel16.7W
Power Dissipation P Channel16.7W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCTo Be Advised
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Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.00529ohm
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance N Channel
0.00529ohm
Drain Source On State Resistance P Channel
0.00529ohm
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Power Dissipation P Channel
16.7W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
30A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAIR
Power Dissipation Pd
16.7W
Power Dissipation N Channel
16.7W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003