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SIZ340DT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 40 A, 40 A, 4200 µohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY4.150 (CNY4.6895) |
| 500+ | CNY3.470 (CNY3.9211) |
| 1000+ | CNY2.760 (CNY3.1188) |
| 5000+ | CNY2.600 (CNY2.938) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY415.00 (CNY468.95 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ340DT-T1-GE3
Order Code2422226RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id40A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.0042ohm
Continuous Drain Current Id N Channel40A
Continuous Drain Current Id P Channel40A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel4200µohm
Drain Source On State Resistance P Channel4200µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Transistor Case StylePowerPAIR
Power Dissipation Pd31W
No. of Pins8Pins
Power Dissipation N Channel31W
Power Dissipation P Channel31W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Product Overview
The SIZ340DT-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for synchronous buck battery charging and graphic cards, POL applications.
- Halogen-free
- TrenchFET® power MOSFET
- 100% Rg and UIS tested
Applications
Industrial, Power Management, Computers & Computer Peripherals
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
40A
On Resistance Rds(on)
0.0042ohm
Continuous Drain Current Id P Channel
40A
Drain Source On State Resistance N Channel
4200µohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation P Channel
31W
Product Range
-
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
40A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
4200µohm
Gate Source Threshold Voltage Max
2.4V
Power Dissipation Pd
31W
Power Dissipation N Channel
31W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033