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SIZ342DT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 30 A, 30 A, 0.0084 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ342DT-T1-GE3
Order Code3772850RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
5,494 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY3.670 (CNY4.1471) |
| 500+ | CNY3.110 (CNY3.5143) |
| 1000+ | CNY2.920 (CNY3.2996) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY367.00 (CNY414.71 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ342DT-T1-GE3
Order Code3772850RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id30A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.0084ohm
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Drain Source On State Resistance N Channel0.0084ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.0084ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Transistor Case StylePowerPAIR
Power Dissipation Pd16.7W
No. of Pins8Pins
Power Dissipation N Channel16.7W
Power Dissipation P Channel16.7W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0084ohm
Continuous Drain Current Id P Channel
30A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation P Channel
16.7W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
30A
Drain Source On State Resistance N Channel
0.0084ohm
Drain Source On State Resistance P Channel
0.0084ohm
Gate Source Threshold Voltage Max
2.4V
Power Dissipation Pd
16.7W
Power Dissipation N Channel
16.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001