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SIZF5302DT-T1-RE3
Dual MOSFET, N Channel, 30 V, 30 V, 100 A, 100 A, 2700 µohm
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ManufacturerVISHAY
Manufacturer Part NoSIZF5302DT-T1-RE3
Order Code4006714RL
Product RangeTrenchFET Gen V Series
Technical Datasheet
13,769 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY7.200 (CNY8.136) |
| 500+ | CNY6.650 (CNY7.5145) |
| 1000+ | CNY6.100 (CNY6.893) |
| 5000+ | CNY5.990 (CNY6.7687) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY720.00 (CNY813.60 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZF5302DT-T1-RE3
Order Code4006714RL
Product RangeTrenchFET Gen V Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityDual N Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id100A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel100A
On Resistance Rds(on)0.0027ohm
Continuous Drain Current Id P Channel100A
Drain Source On State Resistance N Channel2700µohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel2700µohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2V
No. of Pins12Pins
Power Dissipation Pd48.1W
Power Dissipation N Channel48.1W
Power Dissipation P Channel48.1W
Operating Temperature Max150°C
Product RangeTrenchFET Gen V Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
100A
Continuous Drain Current Id N Channel
100A
Continuous Drain Current Id P Channel
100A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
48.1W
Power Dissipation P Channel
48.1W
Product Range
TrenchFET Gen V Series
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Transistor Polarity
Dual N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0027ohm
Drain Source On State Resistance N Channel
2700µohm
Drain Source On State Resistance P Channel
2700µohm
Transistor Case Style
PowerPAIR
No. of Pins
12Pins
Power Dissipation N Channel
48.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001