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SIZF916DT-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 60 A, 60 A, 900 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZF916DT-T1-GE3
Order Code2932986RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 48 week(s)
Notify me when back in stock
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY6.940 (CNY7.8422) |
| 500+ | CNY6.320 (CNY7.1416) |
| 1000+ | CNY5.690 (CNY6.4297) |
| 5000+ | CNY5.080 (CNY5.7404) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY694.00 (CNY784.22 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZF916DT-T1-GE3
Order Code2932986RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
Transistor PolarityN Channel + Schottky
Channel TypeN Channel + Schottky
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id60A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)900µohm
Continuous Drain Current Id N Channel60A
Continuous Drain Current Id P Channel60A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel900µohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel900µohm
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2.2V
No. of Pins8Pins
Power Dissipation Pd60W
Power Dissipation N Channel60W
Power Dissipation P Channel60W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV SkyFET Series
Qualification-
Automotive Qualification Standard-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds
30V
Continuous Drain Current Id
60A
On Resistance Rds(on)
900µohm
Continuous Drain Current Id P Channel
60A
Drain Source On State Resistance N Channel
900µohm
Drain Source On State Resistance P Channel
900µohm
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
60W
Power Dissipation P Channel
60W
Product Range
TrenchFET Gen IV SkyFET Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel + Schottky
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
60A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation N Channel
60W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003