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SQ4917EY-T1_GE3
Dual MOSFET, P Channel, 60 V, 60 V, 8 A, 8 A, 0.04 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ4917EY-T1_GE3
Order Code3470711RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
1 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY8.690 (CNY9.8197) |
| 500+ | CNY7.170 (CNY8.1021) |
| 1000+ | CNY7.030 (CNY7.9439) |
Price for:Each (Supplied on Cut Tape)
Maximum available is 1
Minimum: 100
Multiple: 5
CNY869.00 (CNY981.97 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ4917EY-T1_GE3
Order Code3470711RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.04ohm
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.04ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.04ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2V
No. of Pins8Pins
Power Dissipation Pd5W
Power Dissipation N Channel5W
Power Dissipation P Channel5W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCTo Be Advised
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Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.04ohm
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance N Channel
0.04ohm
Drain Source On State Resistance P Channel
0.04ohm
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
5W
Power Dissipation P Channel
5W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
8A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
To Be Advised
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001