SQJ504EP-T1_GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 30 A, 30 A, 0.0061 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY6.730 (CNY7.6049) |
| 500+ | CNY5.360 (CNY6.0568) |
| 1000+ | CNY4.360 (CNY4.9268) |
| 5000+ | CNY4.280 (CNY4.8364) |
Product Information
Product Overview
New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel TrenchFET® technologies in lead (Pb)- and halogen-free SO packages. Options include the traditional D2PAK (TO-263) and DPAK (TO-252), as well as several PowerPAK® packages, which save space over the D2PAK, DPAK, and SO-8 while delivering similar on-resistance and thermal resistance. The SQ series also includes devices in ultra compact packages such as the TSOP-6, SOT-23, and SC-89.
Technical Specifications
Complementary N and P Channel
40V
30A
0.0061ohm
30A
0.0061ohm
0.0061ohm
2V
34W
34W
TrenchFET Series
AEC-Q101
No SVHC (21-Jan-2025)
Complementary N and P Channel
40V
40V
30A
Surface Mount
10V
PowerPAK SO
8Pins
34W
175°C
AEC-Q101
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate