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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY22.260 (CNY25.1538) |
| 10+ | CNY17.490 (CNY19.7637) |
| 100+ | CNY16.260 (CNY18.3738) |
| 500+ | CNY15.030 (CNY16.9839) |
| 1000+ | CNY13.800 (CNY15.594) |
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CNY22.26 (CNY25.15 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQM40031EL_GE3
Order Code2708324
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id120A
Drain Source On State Resistance0.0025ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation375W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeTrenchFET
QualificationAEC-Q101
MSL-
SVHCLead (07-Nov-2024)
Product Overview
- TrenchFET® power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested
- AEC-Q101 qualified
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
TrenchFET
MSL
-
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002359