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FDS6875
双路场效应管, MOSFET, P沟道, 20 V, 6 A, 0.024 ohm, SOIC, 表面安装
产品概述
The FDS6875 is a dual P-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics like load switching, battery charging and protection circuits applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±8V Gate to source voltage
- -6A Continuous drain current
- -20A Pulsed drain current
应用
工业, 电源管理
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
产品信息
技术文档 (2)
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CAD Models - Notice
CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.
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