产品概述
The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF7648M2 to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms.
- Advanced Process Technology
- Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications
- Exceptionally Small Footprint and Low Profile
- High Power Density
- Low Parasitic Parameters
- Dual Sided Cooling
- 175°C Operating Temperature
- Repetitive Avalanche Capability for Robustness and Reliability
技术规格
N通道
68A
DirectFET M4
10V
63W
175°C
AEC-Q101
No SVHC (21-Jan-2025)
60V
0.0055ohm
表面安装
4V
9引脚
HEXFET
MSL 1 -无限制
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Mexico
进行最后一道重要生产流程所在的地区
RoHS
RoHS
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