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产品信息
制造商INFINEON
制造商产品编号BSC042NE7NS3GATMA1
库存编号2432706
也称为BSC042NE7NS3 G, SP000657440
技术数据表
通道类型N通道
漏源电压, Vds75V
电流, Id 连续100A
漏源接通状态电阻4200µohm
晶体管封装类型TDSON
晶体管安装表面安装
Rds(on)测试电压10V
阈值栅源电压最大值3.1V
功率耗散125W
针脚数8引脚
工作温度最高值150°C
产品范围-
合规-
湿气敏感性等级MSL 1 -无限制
SVHC(高度关注物质)No SVHC (25-Jun-2025)
产品概述
The BSC042NE7NS3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.
- Best switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Ideal for high frequency switching and DC-to-DC converters
- Normal level
- Superior thermal resistance
- 100% avalanche tested
- Qualified according to JEDEC for target applications
- Green device
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
100A
晶体管封装类型
TDSON
Rds(on)测试电压
10V
功率耗散
125W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
漏源电压, Vds
75V
漏源接通状态电阻
4200µohm
晶体管安装
表面安装
阈值栅源电压最大值
3.1V
针脚数
8引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
BSC042NE7NS3GATMA1 的替代之选
找到 1 件产品
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量(千克):.000154