CY15B004J-SXE

CY15B004J-SXE is a CY15B004J 4Kbit non-volatile memory employing an advanced ferroelectric process. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. It performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. It is ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

• 4Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast 2-wire Serial interface (I2C), up to 1MHz frequency
• Direct hardware replacement for serial (I2C) EEPROM
• Low power consumption, 120μA active current at 100KHz
• Voltage operation: VDD = 3.0V to 3.6V
• Automotive-E temperature range from –40°C to +125°C
• AEC Q100 grade 1 compliant
• 8-pin SOIC package
• Voltage operation: VDD = 3.0V to 3.6V