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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY16.890 (CNY19.0857) |
| 10+ | CNY15.450 (CNY17.4585) |
| 50+ | CNY15.220 (CNY17.1986) |
| 100+ | CNY15.110 (CNY17.0743) |
| 250+ | CNY14.990 (CNY16.9387) |
| 500+ | CNY13.620 (CNY15.3906) |
| 1000+ | CNY12.090 (CNY13.6617) |
| 2500+ | CNY10.750 (CNY12.1475) |
产品信息
产品概述
CY15B004Q-SXE is a 4Kbit (512 × 8) serial (SPI) automotive F-RAM. It is a non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. It is capable of supporting 10^13 read/write cycles, or 10 million times more write cycles than EEPROM. It provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The CY15B004Q uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology.
- NoDelay™ writes, advanced high-reliability ferroelectric process
- Very fast serial peripheral interface (SPI), up to 16MHz frequency
- Direct hardware replacement for serial flash and EEPROM
- Sophisticated write protection scheme, software protection using write disable instruction
- Software block protection for 1/4, 1/2, or entire array
- Hardware protection using the write protect (active-low WP) pin
- AEC Q100 grade 1 compliant
- Low-voltage operation VDD=3.0V to 3.6V
- 8-pin SOIC package
- Automotive-E temperature range from -40°C to +125°C
警告
该产品的市场需求较大, 导致交货时间延长。交货日期可能会有延迟。该产品不在折扣范围内。
技术规格
4Kbit
SPI
3V
SOIC
表面安装
125°C
MSL 3 - 168小时
512 x 8位
16MHz
3.6V
8引脚
-40°C
-
No SVHC (25-Jun-2025)
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书