CY15B016Q-SXE

CY15B016Q-SXE is a CY15B016Q 16Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. It performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. It is ideal for non-volatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

• 16Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8, NoDelay™ writes
• Advanced high-reliability ferroelectric process, very fast serial peripheral interface (SPI)
• Up to 16MHz frequency, direct hardware replacement for serial flash and EEPROM
• Sophisticated write protection scheme, software protection using write disable instruction
• Low power consumption, 300μA active current at 1MHz, 20μA (typ) standby current
• Low-voltage operation: VDD = 3.0V to 3.6V
• Automotive-E temperature range from –40°C to +125°C
• 8-pin small outline integrated circuit (SOIC) package
• AEC Q100 grade 1 compliant, hardware protection using the write protect active-low (WP) pin
• Software block protection for 1/4, 1/2, or entire array