CY15B064J-SXET

CY15B064J-SXET is a CY15B064J 64Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. It is ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

• 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast two-wire serial interface (I2C), up to 1MHz frequency, low power consumption
• 120µA (typ) active current at 100kHz, 6µA (typ) standby current
• 2.0V to 3.6V voltage
• Automotive-E temperature range from –40°C to +125°C
• AEC Q100 grade 1 compliant
• 64kbit density, 8-pin SOIC package
• Automotive-E (–40°C to +125°C) temperature range