CY15B104Q-LHXIT

CY15B104Q-LHXIT is a 4Mbit (512 K × 8) serial (SPI) F-RAM. It is a 4Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15B104Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other nonvolatile memories. The CY15B104Q is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.

• Voltage range from 2.0 to 3.6V, density is 4-Mbit, SPI F-RAM
• 8-pin TDFN package type, industrial temperature range from -40 to +85°C
• 4Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8
• High-endurance 100 trillion (1014) read/writes, 151-year data retention
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface, up to 40MHz frequency
• Direct hardware replacement for serial flash and EEPROM
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1), sophisticated write protection scheme
• Software protection using write disable instruction, manufacturer ID and product ID
• Software block protection for 1/4, 1/2, or entire array, low power consumption