CY62128ELL-45ZXIT

CY62128ELL-45ZXIT is a high-performance CMOS static RAM organized as 128K words by 8 bits. This device features an advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (active-low CE1 HIGH or CE2 LOW). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (active-low CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (active-low CE1 LOW and CE2 HIGH and active-low WE LOW). The CY62128E device is suitable for interfacing with processors that have TTL I/P levels.

• Voltage range from 4.5V to 5.5V, automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• Easy memory expansion with active-low CE1, CE2, and active-low OE features
• MoBL SRAM family, 1-Mbit density, × 8 bus width, 90nm process technology
• 45ns speed, input leakage current is +1µA maximum at (GND < VI< VCC)
• Output leakage current is +1µA maximum at (GND < VO < VCC, output disabled)
• VCC operating supply current is 11mA typical at (f = fmax = 1/tRC)
• Input capacitance is 10pF maximum at (TA = 25°C, f = 1MHz, VCC = VCC)
• 1µA typ automatic CE power-down current—CMOS inputs at (active-low CE1 > VCC – 0.2V or CE2 < 0.2V)
• Industrial temperature range from 32-pin TSOP package