CY62147EV30LL-45BVXIT

CY62147EV30LL-45BVXIT is a CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE high or both BLE and BHE are high). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: deselected (CE high), outputs are disabled (OE high), both byte high enable and byte low enable are disabled (BHE, BLE high), write operation is active (CE low and WE low).

• Very high speed is 45ns, pin compatible with CY62147DV30
• Ultra low standby power, ultra low active power
• Typical active current: 3.5mA at f = 1MHz
• Automatic power-down when deselected, byte power-down feature
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• 48-ball VFBGA package
• Industrial temperature range from –40°C to +85°C
• 2.2V to 3.6V voltage rating (VCC)