CY7C1011DV33-10ZSXI

CY7C1011DV33-10ZSXI is a high-performance CMOS static RAM organized as 128K words by 16 bits. Writing to the device is accomplished by taking chip enable (active-low CE) and write enable (active-low WE) inputs LOW. Reading from the device is accomplished by taking chip enable (active-low CE) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), the active-low BHE and active-low BLE are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE LOW, and active-low WE LOW).

• Pin-and function-compatible with CY7C1011CV33
• High speed, tAA=10ns
• VCC Operating supply current is 90mA max at 100MHz, VCC=Max, f=fMAX=1/tRC
• Automatic CE power-down current-CMOS inputs is 10mA at Max VCC, CE>VCC-0.3V, VIN>VCC-0.3V/VIN<0.3V
• Data retention at 2.0V
• Automatic power-down when deselected, independent control of upper and lower bits
• Easy memory expansion with active-low CE and active-low OE features
• Vcc is 3.3V ±0.3V
• 44-pin TSOP II package
• Industrial ambient temperature range from -40°C to +85°C