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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY42.770 (CNY48.3301) |
| 10+ | CNY42.600 (CNY48.138) |
产品信息
产品概述
CY7C1041G-10VXIT is a high-performance CMOS fast static RAM device with embedded ECC. This offers in single chip-enable option and in multiple pin configurations. Data writes are performed by asserting the chip enable active-low (CE) and write enable active-low (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The byte high enable active-low (BHE) and byte low enable active-low (BLE) inputs control write operations to the upper and lower bytes of the specified memory location. Active-low BHE controls I/O8 through I/O15 and active-low BLE controls I/O0 through I/O7.
- High speed tAA = 10ns, 4.5V–5.5V voltage range, 4Mbit density
- 44-pin SOJ (400 Mils) package
- Active current: ICC = 38mA typical, standby current: ISB2 = 6mA typical
- 1.0-V data retention, TTL-compatible inputs and outputs
- Industrial operating temperature rating range from –40°C to +85°C
技术规格
异步SRAM
4Mbit
4.5V 至 5.5V
SOJ
44引脚
10ns
5V
表面安装
85°C
-
4Mbit
256Kword x 16位
256Kword x 16位
SOJ
4.5V
5.5V
-
-40°C
-
No SVHC (25-Jun-2025)
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书