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数量 | 价钱 (含税) |
---|---|
1+ | CNY2,024.190 (CNY2,287.3347) |
产品信息
产品概述
EVAL-2ED2101-HB-LLC features the 2ED2101S06F SOI level-shift gate driver for driving the primary-side half bridge and the dual-channel low-side gate driver 2ED24427N01F with pulse transformer to ensure control signal isolation for the secondary rectifying stage. Also, the 2ED24427N01F is used to drive the synchronous rectification output stage. It includes all of the required elements for an LLC converter, such as the high performance resonant controller ICE2HS01G, IPL60R650P6S 600V CoolMOS™ P6 transistors, and BSC022N04LS6 OptiMOS™ switches. This evaluation board demonstrates our thin-film SOI technology and advanced control for HB-LLC converter with synchronous rectification at the secondary side. For a flexible input DC voltage between 360- 425V, it provides a 12V output voltage with maximum currents up to 16.7A.
- 650V HB-LLC direct drive topology eliminates cost / space of high side drive pulse transformer
- 500KHz switching reduces cost / size of resonant components
- Transformer integrates resonant inductance for further cost / size savings
技术规格
Infineon
电源管理
评估板 2ED24427N01F/2ED2101S06F
No SVHC (21-Jan-2025)
2ED24427N01F, 2ED2101S06F
隔离栅极驱动器
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技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Germany
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书