FM24CL16B-DG

FM24CL16B-DG is a 16-Kbit non-volatile memory in 8 pin DFN-EP package. A F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, the FM24CL16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24CL16B is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM.

• 16Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8
• Advanced high-reliability ferroelectric process
• Fast 2-wire serial interface (I2C)
• Low power consumption of 100µA active current at 100KHz, 3µA (typ) standby current
• Low-voltage operation: VDD = 2.7V to 3.65V
• Industrial temperature range from –40°C to +85°C