FM24V02A-G

FM24V02A-G is a 256-Kbit (32K × 8) serial (I²C) F-RAM. It is a non-volatile memory employing an advanced ferroelectric process. An F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, the FM24V02A performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. F-RAM also exhibits much lower power during writes than EEPROM because write operations do not require an internally elevated power supply voltage for write circuits.

• 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
• High-endurance 100 trillion read/writes, 151-year data retention
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast two-wire serial interface, up to 3.4MHz frequency
• Direct hardware replacement for serial EEPROM
• Supports legacy timing range for 100KHz and 400KHz
• Manufacturer ID and product ID, low power consumption
• Power supply range from 2.0 to 3.6V
• 175A typical average VDD current (fSCL = 100KHz)
• 8 pin SOIC package, industrial temperature range from -40 to +85°C