FM24V05-GTR

FM24V05-GTR is a 512-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, the FM24V05 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits.

• No Delay™ writes
• Advanced high-reliability ferroelectric process
• 151-year data retention
• Low-voltage operation of VDD = 2V to 3.6V
• Fast 2-wire serial interface (I2C), up to 3.4MHz frequency
• Direct hardware replacement for serial (I2C) EEPROM
• Supports legacy timings for 100KHz and 400KHz
• Power consumption of 175µA active at 100KHz, 90µA (typ) standby and 5µA (typ) sleep mode current
• 8-pin SOIC package
• Industrial temperature range from -40°C to +85°C