FM25CL64B-DG

FM25CL64B-D is a 64Kbit non-volatile memory employing an advanced ferroelectric process in 8 pin DFN-EP package. A F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. FM25CL64B is capable of supporting 10^14 read/write cycles or 100 million times more write cycles than EEPROM. These capabilities make FM25CL64B ideal for non-volatile memory applications requiring frequent or rapid writes.

• 64Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
• Advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI)
• Low power consumption of 200µA active current at 1MHz, 3µA (typ) standby current
• Low-voltage operation: VDD = 2.7V to 3.65V
• Industrial temperature range from –40°C to +85°C