FM25V02A-GTR

FM25V02A-GTR is a 256Kbit, serial non-volatile memory employing an advanced ferroelectric process. The F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the FM25V02A performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. The FM25V02A is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.

• 256Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
• 151-year data retention, No Delay™ writes, advanced high-reliability ferroelectric process
• Up to 40MHz frequency, direct hardware replacement for serial flash and EEPROM
• Hardware protection using the write protect (active-low WP) pin
• Software protection using write disable instruction
• VDD voltage range from 2.0V to 3.6V
• VDD supply current is 2.5mA maximum at (fSCK = 40MHz)
• VDD standby current is 90µA typ at (active-low CS = VDD. All other inputs VSS or VDD)
• Sleep mode current is 5µA typ at (active-low CS = VDD. All other inputs VSS or VDD)
• Industrial ambient temperature range from -40°C to +85°C, 8-pin SOIC package