FM25V20A-G

FM25V20A-G is a 2Mbit non-volatile memory (serial (SPI) F-RAM) employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM and other non-volatile memories. Unlike serial flash and EEPROM, FM25V20A performs write operations at bus speed. No write delays are incurred. Data is written to memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, product offers substantial write endurance compared with other non-volatile memories. It is capable of supporting 10¹⁴ read/write cycles, or 100 million times more write cycles than EEPROM. These make the FM25V20A ideal for non-volatile memory applications, requiring frequent or rapid writes.

• No Delay™ writes
• Advanced high-reliability ferroelectric process and 151-year data retention
• Voltage range from 2V to 3.6V
• Very fast SPI (up to 40MHz frequency, supports SPI mode 0 (0, 0) and mode 3 (1, 1))
• Direct hardware replacement for serial flash and EEPROM
• Sophisticated write protection scheme (SW protection using write disable instruction)
• Software block protection for 1/4, 1/2, or entire array
• Power consumption of 800µA active at 1MHz, 100µA (typ) standby and 3µA sleep mode currents
• 8-pin SOIC package
• Industrial temperature range from -40°C to +85°C