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产品信息
制造商INFINEON
制造商产品编号IDM10G120C5XTMA1
库存编号2780807RL
产品范围thinQ 5G 1200V
也称为IDM10G120C5, SP001127116
技术数据表
产品范围thinQ 5G 1200V
二极管配置单
反向重复峰值电压1.2kV
平均正向电流38A
总电容充电41nC
二极管封装类型TO-252 (DPAK)
引脚数2引脚
工作温度最高值175°C
二极管安装表面安装
合规-
SVHC(高度关注物质)No SVHC (21-Jan-2025)
产品概述
5th Generation thinQ!™ 1200V SiC Schottky diode suitable for use in solar inverters, uninterruptable power supplies, motor drives and power factor correction. Benefits of using Schottky diode are System efficiency improvement over Si diodes, system cost / size savings due to reduced cooling requirements, enabling higher frequency / increased power density solutions, higher system reliability due to lower operating temperatures and reduced EMI.
- Revolutionary semiconductor material - silicon carbide
- No reverse recovery current / no forward recovery
- Temperature independent switching behaviour
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Excellent thermal performance
- Extended surge current capability
- Specified dv/dt ruggedness
- Qualified according to JEDEC for target applications
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
产品范围
thinQ 5G 1200V
反向重复峰值电压
1.2kV
总电容充电
41nC
引脚数
2引脚
二极管安装
表面安装
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
二极管配置
单
平均正向电流
38A
二极管封装类型
TO-252 (DPAK)
工作温度最高值
175°C
合规
-
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
税则号:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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产品合规证书
重量(千克):.000426