IGB10N60TATMA1

The IGB10N60T is a Low Loss IGBT in TRENCHSTOP™ and field-stop technology. The TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of Trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

• Lowest Vce (sat) drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
• Very soft and fast recovery anti-parallel emitter controlled diode
• High ruggedness, temperature stable behaviour
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Highest efficiency - Low conduction and switching losses
• High device reliability
• 5μs Short-circuit withstand time
• Green product
• Halogen-free

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.