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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY54.530 (CNY61.6189) |
| 10+ | CNY38.460 (CNY43.4598) |
| 100+ | CNY32.070 (CNY36.2391) |
| 500+ | CNY29.440 (CNY33.2672) |
| 1000+ | CNY27.060 (CNY30.5778) |
产品概述
IMDQ75R060M1HXUMA1 is a CoolSiC™ MOSFET 750V Generation 1 (G1) in Q-DPAK package. The CoolSiC™ MOSFET 750V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750V strengths offering more density, optimized power loop design and less system and assembly cost. Typical applications include solid state relays and circuit breakers, EV charging infrastructure, solar PV inverters, UPS (uninterruptable power supplies, energy storage and battery formation and telecom and server SMPS.
- 90mohm RDs(on) typical
- Highly robust 750V technology, 100% avalanche tested
- Enhanced robustness and reliability for bus voltages beyond 500V
- Superior efficiency in hard switching
- Higher switching frequency in soft switching topologies
- Robustness against parasitic turn on for unipolar gate driving
- Best‑in‑class thermal dissipation
- Reduced switching losses through improved gate control
技术规格
单
34A
0.055ohm
22引脚
5.6V
175°C
No SVHC (25-Jun-2025)
N通道
750V
HDSOP
20V
167W
CoolSiC G1 Series
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书